Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks
- Gennadi Bersuker
- Chang Seo Park
- et al.
- 2010
- IEEE T-ED
Publications
5 results for Gennadi Bersuker
The dielectric breakdown in gate oxides under high field stress
- S. Lombardo
- J.H. Stathis
- et al.
- 2009
- ECS Meeting 2009
A new methodology for characterizing the progressive BD of HfO 2/SiO2 metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- SBMicro 2008
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
Surface potential and morphology issues of annealed (HfO 2) x(SiO 2) 1-x gate oxides
- R. Ludeke
- P. Lysaght
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures