Atomic layer deposition of sidewall spacers: Process, equipment and integration challenges in state-of-the-art logic technologies
- Michael Belyansky
- Richard Conti
- et al.
- 2014
- ECS Meeting 2014
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88 results for Takashi Ando
A simulation study of oxygen vacancy-induced variability in HfO 2/metal gated SOI FinFET
- Amit Ranjan Trivedi
- Takashi Ando
- et al.
- 2014
- IEEE T-ED
The past, present and future of high-k/metal gates
- Kisik Choi
- Takashi Ando
- et al.
- 2013
- ECS Meeting 2013
Characterization and optimization of charge trapping in high-k dielectrics
- Eduard Cartier
- Takashi Ando
- et al.
- 2013
- IRPS 2013
Origins of effective work function roll-off behavior for high-κ last replacement metal gate stacks
- Takashi Ando
- Eduard A. Cartier
- et al.
- 2013
- IEEE Electron Device Letters
Aggressive SiGe channel gate stack scaling by remote Oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Solid State Letters
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
Aggressive sige channel gate stack scaling by remote oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Meeting 2012
Bias temperature instability in high-κ/metal gate transistors - Gate stack scaling trends
- Siddarth Krishnan
- Vijay Narayanan
- et al.
- 2012
- IRPS 2012
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis