Publications

2 results for Keiko Ariyoshi

Full metal gate with borderless contact for 14 nm and beyond
- - Soon-Cheon Seo
  - L.F. Edge
  - et al.
- 2011
- VLSI Technology 2011
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- IEEE T-ED