Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics
Paper
Publications
10 results for Y. Zhang
Fluorocarbon high density plasmas. VII. Investigation of selective SiO2-to-Si3N4 high density plasma etch processes
- Ying Zhang
- Gottlieb S. Oehrlein
- et al.
- 1996
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperFluorocarbon high-density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperReactive ion etching lag investigation of oxide etching in fluorocarbon electron cyclotron resonance plasmas
- O. Joubert
- G.S. Oehrlein
- et al.
- 1994
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperReactive Ion Etching of Sige Alloys using Fluorine-Containing Plasmas *
- James W. Corbett
- Gottlieb S. Oehrlein
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperHigh-Resolution Depth Profiling of Ultrathin Silicon Oxide/Nitride/Oxide Layers
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1993
- JES
PaperReactive ion etching of SiGe alloys using CF2Cl2
- Ying Zhang
- Gottlieb S. Oehrlein
- et al.
- 1992
- Journal of Applied Physics
PaperInteractive effects in the reactive ion etching of SiGe alloys
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1991
- Applied Physics Letters
PaperReactive ion etching of SiGe alloys using HBr
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
PaperStudies of the reactive ion etching of SiGe alloys
- G.S. Oehriein
- G.M.W. Kroesen
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper