Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics
Paper
Publications
7 results for G. Lucovsky
The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te 5
- J.S. Washington
- E. Joseph
- et al.
- 2009
- MRS Spring Meeting 2009
Conference paperSuppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
- L.F. Edge
- D.G. Schlom
- et al.
- 2004
- Applied Physics Letters
PaperLong-wavelength optical phonons in Ga1-xInxP
- G. Lucovsky
- M.H. Brodsky
- et al.
- 1971
- Physical Review B
PaperInfrared reflectivity spectra of the mixed crystal system Ga1-xInxSb
- M.H. Brodsky
- G. Lucovsky
- et al.
- 1970
- Physical Review B
PaperExtension of a linear diatomic-chain model for the calculation of local-mode frequencies in real crystals
- G. Lucovsky
- M.H. Brodsky
- et al.
- 1970
- Physical Review B
PaperInfrared reflection spectra of Ga1-xInxAs: A new type of mixed-crystal behavior
- M.H. Brodsky
- G. Lucovsky
- 1968
- Physical Review Letters
Paper