High mobility In 0.53Ga 0.47As quantum-well metal oxide semiconductor field effect transistor structures
- Li Yang
- Cheng-Wei Cheng
- et al.
- 2012
- Journal of Applied Physics
Paper
Publications
6 results for E.A. Fitzgerald
Effect of Al2O3/InGaAs interface on channel mobility
- L. Yang
- C.-W. Cheng
- et al.
- 2011
- ECS Meeting 2011
Conference paperThe effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors
- Cheng-Wei Cheng
- George Apostolopoulos
- et al.
- 2011
- Journal of Applied Physics
PaperImpact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- Hasan M. Nayfeh
- et al.
- 2004
- IEEE Transactions on Electron Devices
PaperNucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
- E.A. Fitzgerald
- G.P. Watson
- et al.
- 1989
- Journal of Applied Physics
PaperStructure and recombination in InGaAs/GaAs heterostructures
- E.A. Fitzgerald
- D. Ast
- et al.
- 1988
- Journal of Applied Physics
Paper