Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 2000
- IEEE Electron Device Letters
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148 results for Jack O. Chu
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
- P.M. Mooney
- J.O. Chu
- et al.
- 2000
- Journal of Electronic Materials
SiGe technology: Heteroepitaxy and high-speed microelectronics
- P.M. Mooney
- J.O. Chu
- 2000
- Annual Review of Materials Science
High transconductance 0.1 μm Ge/Si0.4Ge0.6 Schottky-gated p-MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- DRC 1999
High-performance SiGe pMODFETs grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 1999
- EDMO 1999
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- Electronics Letters
Quantum indistinguishability effects of confined polyexcitons
- Kai Shum
- P.M. Mooney
- et al.
- 1999
- Physical Review B - CMMP
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
- S.J. Koester
- J.O. Chu
- et al.
- 1999
- Electronics Letters