20 nm N + abrupt junction formation in Strained Si/Si 1-xGe x MOS device
- K.L. Lee
- F. Cardone
- et al.
- 2003
- IEDM 2003
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148 results for Jack O. Chu
80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
SGOI thinning and uniformity improvement using a fluoride GCIB process
- J.O. Chu
- L.P. Allen
- et al.
- 2003
- IEEE International SOI Conference 2003
Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
- Q. Ouyang
- S.J. Koester
- et al.
- 2003
- SISPAD 2003
Free standing silicon as a compliant substrate for SiGe
- G.M. Cohen
- P.M. Mooney
- et al.
- 2003
- MRS Proceedings 2003
Free standing silicon as a compliant substrate for SiGe
- G.M. Cohen
- P.M. Mooney
- et al.
- 2003
- MRS Proceedings 2003
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers
- D.B. Aubertine
- M.A. Mander
- et al.
- 2002
- Journal of Applied Physics