Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
- K.A. Slinker
- K.L.M. Lewis
- et al.
- 2005
- New Journal of Physics
Publications
Date
Featured collections
Popular topics
148 results for Jack O. Chu
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth
- S.J. Koester
- J. Schaub
- et al.
- 2004
- DRC 2004
Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
- et al.
- 2004
- IEDM 2004
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
High-speed Germanium-on-SOI lateral PIN photodiodes
- G. Dehlinger
- S.J. Koester
- et al.
- 2004
- IEEE Photonics Technology Letters
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS device
- K.-L. Lee
- F. Cardone
- et al.
- 2004
- ECS Meeting 2004