Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacksV. NarayananK. Maitraet al.2006IEEE Electron Device Letters
On the location and magnitude of trapped charge in poly- Si ALD-Al 2O3 capped Hf-silicate gate stacksKingsuk MaitraBarry P. Linderet al.2005PRiME/ECS Meeting 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodesR. JammyV. Narayananet al.2005ISTC 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobilityM.M. FrankV.K. Paruchuriet al.2005VLSI-TSA 2005
Charge trapping in aggressively scaled metal gate/high-κ stacksE. GusevV. Narayananet al.2004IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakageE. GusevC. Cabral Jr.et al.2004IEDM 2004