In situ spatially resolved surface characterization of realistic semiconductor structure after reactive ion etching process
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1988
- Journal of Applied Physics
Paper
Publications
118 results for Gottlieb S. Oehrlein
Capacitance-voltage properties of thin Ta2O5 films on silicon
- Gottlieb S. Oehrlein
- 1988
- Thin Solid Films
PaperValence-band photoemission and electron energy-loss studies of reactive ion etched silicon dioxide
- S.W. Robey
- G.S. Oehrlein
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperTransient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching
- Mark A. Jaso
- Gottlieb S. Oehrlein
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperX-ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2magnetron ion etching: Comparisons to reactive ion etching
- Gottlieb S. Oehrlein
- Arthur A. Bright
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperHydrogen plasma induced defects in silicon
- S.-J. Jeng
- G.S. Oehrlein
- et al.
- 1988
- Applied Physics Letters
PaperMedium energy ion scattering analysis of reactive ion etched Si(001) surfaces
- M. Copel
- R.M. Tromp
- et al.
- 1988
- Applied Physics Letters
PaperMicrostructural studies of reactive ion etched silicon
- S.-J. Jeng
- G.S. Oehrlein
- 1987
- Applied Physics Letters
PaperStructure of the boron-hydrogen complex in crystalline silicon
- A.D. Marwick
- G.S. Oehrlein
- et al.
- 1987
- Physical Review B
PaperReactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
- Gottiieb S. Oehrlein
- Young H. Lee
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper