Grazing angle optical emission interferometry for end-point detection
- David Angell
- Gottlieb S. Oehrlein
- 1991
- Applied Physics Letters
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117 results for Gottlieb S. Oehrlein
Photoluminescence characterization of plasma exposed silicon surfaces
- A. Henry
- B. Monemar
- et al.
- 1991
- Journal of Applied Physics
Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- H. Weman
- J.L. Lindström
- et al.
- 1990
- Journal of Applied Physics
X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- A.S. Yapsir
- G.S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Cryogenic reactive ion etching of silicon in SF6
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Selective dry etching of silicon with respect to germanium
- G.S. Oehrlein
- T.D. Bestwick
- et al.
- 1990
- Applied Physics Letters
Strain-induced quantum confinement of carriers due to extended defects in silicon
- H. Weman
- B. Monemar
- et al.
- 1990
- Physical Review B
Reactive ion etching of silicon using bromine containing plasmas
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior
- T.D. Bestwick
- G.S. Oehrlein
- et al.
- 1989
- Applied Physics Letters
Silicon loss and transient etch rate in selective reactive ion etching of oxide overlayers
- G.S. Oehrlein
- R. Kalish
- 1989
- Applied Physics Letters