Etch tailoring through flexible end-point detection
- D. Angell
- G.S. Oehrlein
- 1990
- SPIE Processing Integration 1990
Conference paper
Publications
118 results for Gottlieb S. Oehrlein
Strain-induced quantum confinement of carriers due to extended defects in silicon
- H. Weman
- B. Monemar
- et al.
- 1990
- Physical Review B
PaperMicroscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance
- W.M. Chen
- O.O. Awadelkarim
- et al.
- 1990
- Physical Review Letters
PaperReactive ion etching of silicon using bromine containing plasmas
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperSecondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure rf glow discharges
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- 1989
- Radiation Effects and Defects in Solids
PaperRie-induced damage and contamination in silicon
- Young H. Lee
- G.S. Oehrlein
- et al.
- 1989
- Radiation Effects and Defects in Solids
PaperSilicon loss and transient etch rate in selective reactive ion etching of oxide overlayers
- G.S. Oehrlein
- R. Kalish
- 1989
- Applied Physics Letters
PaperEffects of deuterium plasmas on silicon near-surface properties
- J.L. Lindström
- G.S. Oehrlein
- et al.
- 1989
- Journal of Applied Physics
PaperStudy of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior
- T.D. Bestwick
- G.S. Oehrlein
- et al.
- 1989
- Applied Physics Letters
PaperA photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4
- S.W. Robey
- M.A. Jaso
- et al.
- 1989
- Journal of Applied Physics
Paper