Publications

30 results for J. Gill

65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- - V. McGahay
  - G. Bonilla
  - et al.
- 2006
- IITC 2006
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications
- - Matthew Angyal
  - Jason Gill
  - et al.
- 2005
- AMC 2005
Damascene copper integration impact on electomigration and stress migration
- - Anthony K. Stamper
  - H. Baks
  - et al.
- 2005
- AMC 2005
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- - K. Ida
  - S. Nguyen
  - et al.
- 2005
- AMC 2005
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrules
- - S. Lane
  - M. Fukasawa
  - et al.
- 2005
- AMC 2005
Determination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures
- - F. Chen
  - J. Gill
  - et al.
- 2006
- Microelectronics Reliability
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65 nm groundrules
- - M. Fukasawa
  - S. Lane
  - et al.
- 2005
- IITC 2005
Extendibility of PVD barrier/seed for BEOL Cu metallization
- - C.-C. Yang
  - D. Edelstein
  - et al.
- 2005
- IITC 2005
Lower-k SiCOH integration for 65 nm ground rules
- - T. Nogami
  - S. Lane
  - et al.
- 2005
- VMIC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- - T. Nogami
  - S. Lane
  - et al.
- 2005
- Optics East 2005