Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature
- J.P. Conde
- K.K. Chan
- et al.
- 1993
- Journal of Applied Physics
Publications
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81 results for Kevin Chan
High temperature stability and relaxation of UHV/CVD SiGe thin films
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- MRS Fall Meeting 1992
High-Performance Si/SiGe n-Type Modulation-Doped Transistors
- Khaled Ismail
- S. Rishton
- et al.
- 1993
- IEEE Electron Device Letters
The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- Journal of Applied Physics
The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge
- J.P. Conde
- K.K. Chan
- et al.
- 1992
- Journal of Applied Physics
Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement
- J.P. Conde
- K.K. Chan
- et al.
- 1992
- Journal of Applied Physics
The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment-The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- Journal of Applied Physics
Thermal stress-induced and electromigration-induced void-open failures in Al and Al-Cu fine lines
- T. Kwok
- K.K. Chan
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
Surface analysis of realistic semiconductor microstructures
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films