Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission
- Zhen Zhang
- Joanna Atkin
- et al.
- 2012
- IEEE T-ED
Paper
Publications
7 results for Michael Hatzistergos
Leakage and contact resistance reduction by diffusion of dopants in NiPt suicide
- Ahmet Ozcan
- Ming Cai
- et al.
- 2011
- ADMETA 2011
Conference paperPulsed-laser atom probe tomography of p-type field effect transistors on Si-on-insulator substrates
- S. Jin
- K.S. Jones
- et al.
- 2011
- Journal of Vacuum Science and Technology B
PaperSIMS quantification of SiGe composition with low-energy ion beams
- Zhengmao Zhu
- Paul Ronsheim
- et al.
- 2011
- Surface and Interface Analysis
PaperDopant measurements in semiconductors with atom probe tomography
- P.A. Ronsheim
- M. Hatzistergos
- et al.
- 2010
- Journal of Vacuum Science and Technology B
PaperHigh-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
- D.-G. Park
- K. Stein
- et al.
- 2009
- VLSI-TSA 2009
Conference paperImpurity measurements in silicon with D-SIMS and atom probe tomography
- P.A. Ronsheim
- P. Flaitz
- et al.
- 2008
- Applied Surface Science
Paper