Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2012
- Applied Physics Letters
Paper
Publications
8 results for C. Gerl
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering
PaperGaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- M. Richter
- Christophe Rossel
- et al.
- 2011
- Journal of Crystal Growth
PaperSputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Michael Gordon
- et al.
- 2010
- Journal of Vacuum Science and Technology B
PaperStructural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- Chiara Marchiori
- Ed Kiewra
- et al.
- 2010
- Applied Physics Letters
PaperSputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Dirk Pfeiffer
- et al.
- 2010
- ECS Transactions
Conference paperH plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- C. Marchiori
- D.J. Webb
- et al.
- 2009
- Journal of Applied Physics
PaperCMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Conference paper