Bottom electrode properties and electrical field cycling effects on hfox based resistive switching memory device
- J. Li
- Youngseok Kim
- et al.
- 2020
- ISTFA 2020
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15 results for Youngseok Kim
Hardware and Software Co-optimization for the Initialization Failure of the ReRAM-based Cross-bar Array
- Youngseok Kim
- S. Kim
- et al.
- 2020
- ACM JETC
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
- Ernest Wu
- Takashi Ando
- et al.
- 2019
- IEDM 2019
Reliability Challenges with Materials for Analog Computing
- Eduard Cartier
- Wanki Kim
- et al.
- 2019
- IRPS 2019