Microstructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60% Silicon-Germanium layers
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ECS Meeting 2012
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188 results for Devendra Sadana
Cost-effective layer transfer by controlled spalling technology
- Stephen W. Bedell
- Davood Shahrjerdi
- et al.
- 2012
- ISSWB 2012
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
Gas source depletion study of high-order silanes of silicon-based epitaxial layers grown with RPCVD and low temperatures
- Keith Chung
- Paul Brabant
- et al.
- 2012
- ECS Meeting 2012
Ultra low temperature epitaxial growth of strained Si directly on Si substrates
- Davood Shahrjerdi
- Bahman Hekmatshoar
- et al.
- 2012
- ECS Meeting 2012
Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance
- Can Bayram
- Devendra K. Sadana
- et al.
- 2012
- SPIE OPTO 2012
Method to determine the collection length in field-driven a-Si 1-xGe x:H solar cells
- Osama Tobail
- Jeehwan Kim
- et al.
- 2011
- e-MRS Spring Meeting 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Thermal budget reduction and throughput enhancement for CMOS Epi stressors via wet clean interface contamination evaluation and control
- Paul Brabant
- Keith Chung
- et al.
- 2011
- ASMC 2011