Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2012
- Applied Physics Letters
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188 results for Devendra Sadana
Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells
- Bahman Hekmatshoar
- Davood Shahrjerdi
- et al.
- 2012
- Applied Physics Letters
High-efficiency heterojunction solar cells on crystalline germanium substrates
- Bahman Hekmatshoar
- Davood Shahrjerdi
- et al.
- 2012
- Applied Physics Letters
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
Kerf-less removal of Si, Ge, and III-V layers by controlled spalling to enable low-cost PV technologies
- Stephen W. Bedell
- Davood Shahrjerdi
- et al.
- 2012
- IEEE Journal of Photovoltaics
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
- Davood Shahrjerdi
- Stephen W. Bedell
- et al.
- 2012
- Applied Physics Letters
Effect of thermal annealing on carbon in in-situ phosphorous-doped Si 1-xC x films
- Thomas Adam
- Nicolas Loubet
- et al.
- 2012
- Thin Solid Films
High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition
- Hong He
- Paul Brabant
- et al.
- 2012
- Thin Solid Films
Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
- Manabu Shinriki
- Keith Chung
- et al.
- 2012
- Thin Solid Films
Low-temperature a-Si:H/GaAs Hheterojunction solar cells
- Davood Shahrjerdi
- Bahman Hekmatshoar
- et al.
- 2011
- IEEE Journal of Photovoltaics