Publications

188 results for Devendra Sadana

Enhancement-mode in_0.70Ga_0.30As-channel MOSFETs with ALD Al₂O₃
- - Yanning Sun
  - E.W. Kiewra
  - et al.
- 2007
- DRC 2007
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- - Yanning Sun
  - S.J. Koester
  - et al.
- 2007
- CS MANTECH 2007
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- - Katherine L. Saenger
  - Haizhou Yin
  - et al.
- 2007
- MRS Spring 2007
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- - Haizhou Yin
  - Z. Ren
  - et al.
- 2006
- ICSICT 2006
Study of HCl and secco defect etching for characterization of thick sSOI
- - A. Abbadie
  - S.W. Bedell
  - et al.
- 2007
- JES
Enhancement-mode buried-channel In_0.7Ga_0.3As/ In_0.52Al_0.48 MOSFETs with high-κ gate dielectrics
- - Yanning Sun
  - E.W. Kiewra
  - et al.
- 2007
- IEEE Electron Device Letters
An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si
- - K.L. Saenger
  - K.E. Fogel
  - et al.
- 2007
- Journal of Applied Physics
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution: Wafer fabrication technique and device applications
- - K.L. Saenger
  - J.P. De Souza
  - et al.
- 2007
- ECS Meeting 2007
Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization
- - K.L. Saenger
  - K.E. Fogel
  - et al.
- 2007
- Journal of Applied Physics
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- - K.L. Saenger
  - J.P. De Souza
  - et al.
- 2007
- Journal of Applied Physics