Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2013
- IEEE Electron Device Letters
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105 results for Ghavam Shahidi
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
A comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
CeNSE: A central nervous system for the earth
- Ghavam G. Shahidi
- 2011
- TTM 2011
Impact of back bias on ultra-thin body and BOX (UTBB) devices
- Q. Liu
- Frederic Monsieur
- et al.
- 2011
- VLSI Technology 2011
High-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
Extremely thin SOI (ETSOI) technology: Past, present, and future
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2010
- IEEE International SOI Conference 2010