Publications

10 results for M. G. Gottwald

Measurement of CoFeB configurational ordering in magnetic random-access memory stacks using extended x-ray absorption fine structure spectroscopy
- - Matthias Gottwald
  - Christian Lavoie
  - et al.
- 2025
- Journal of Vacuum Science and Technology A Vacuum Surfaces and Films
Paper
Double spin-torque magnetic tunnel junction devices for last-level cache applications
- - G. Hu
  - C. Safranski
  - et al.
- 2022
- IEDM 2022
Conference paper
STT-MRAM - Status and Outlook
- - Daniel C. Worledge
  - C. Safranski
  - et al.
- 2022
- TMRC 2022
Conference paper
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- - C. Safranski
  - G. Hu
  - et al.
- 2022
- VLSI Technology and Circuits 2022
Conference paper
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- - Christopher Safranski
  - Guohan Hu
  - et al.
- 2021
- IEEE T-ED
Paper
Demonstration of narrow switching distributions in STT-MRAM arrays for LLC applications at 1x nm node
- - E. R.J. Edwards
  - Guohan Hu
  - et al.
- 2020
- IEDM 2020
Conference paper
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- - Guohan Hu
  - D. Kim
  - et al.
- 2019
- IEDM 2019
Conference paper
Reliable 5 ns writing of spin-transfer torque MRAM
- - Guohan Hu
  - J. J. Nowak
  - et al.
- 2019
- IEEE Magnetics Letters
Paper
Co/Ni multilayers for spintronics: High spin polarization and tunable magnetic anisotropy
- - S. Andrieu
  - T. Hauet
  - et al.
- 2018
- Physical Review Materials
Paper
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- - Guohan Hu
  - M. G. Gottwald
  - et al.
- 2017
- IEDM 2017
Conference paper