Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices
- H. Zhou
- M. Hasanuzzaman
- et al.
- 2025
- IRPS 2025
Conference paper
Publications
5 results for Liqiao Qin
Development of Epitaxial SiGeB as a Test Vehicle to Evaluate Source-Drain Etchout during Channel Release of Gate-all-Around Devices: Topic/category: AEPM: Advanced Equipment Processes and Materials
- M. Nasseri
- C. Durfee
- et al.
- 2024
- ASMC 2024
Conference paperEvaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
Conference paperNext Generation Infrared (IR) Laser Debonding / Silicon Handle Technology for Precision Chiplet Technology Applications
- Qianwen Chen
- Michael Belyansky
- et al.
- 2023
- ECTC 2023
Conference paperCritical Elements for Next Generation High Performance Computing Nanosheet Technology
- R. Bao
- C. Durfee
- et al.
- 2021
- IEDM 2021
Conference paper