Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- C. Safranski
- G. Hu
- et al.
- 2022
- VLSI Technology and Circuits 2022
Publications
6 results for Eric R. J. Edwards
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache Applications
- H. Wu
- V. Katragadda
- et al.
- 2021
- IEDM 2021
Spin-wave localization and guiding by magnon band structure engineering in yttrium iron garnet
- Rouven Dreyer
- Niklas Liebing
- et al.
- 2021
- Physical Review Materials
A 14 nm embedded STT-MRAM CMOS technology
- Daniel C. Edelstein
- M. Rizzolo
- et al.
- 2020
- IEDM 2020
Characterization of Uniformity in Nb/NbxSi1-x/Nb Josephson Junctions
- Ian W. Haygood
- Eric R. J. Edwards
- et al.
- 2019
- IEEE TAS