Publications

40 results for A. Kerber

Impact of instrumental current scatter on fast Bias Temperature Instability testing
- - A. Kerber
  - K. Zhao
  - et al.
- 2009
- IIRW 2009
Understanding mobility mechanisms in extremely scaled HfO₂ (EOT 0.42 nm) using remote interfacial layer scavenging technique and V _t-tuning dipoles with gate-first process
- - T. Ando
  - M.M. Frank
  - et al.
- 2009
- IEDM 2009
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- - K. Choi
  - H. Jagannathan
  - et al.
- 2009
- VLSI Technology 2009
Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks
- - T. Nigam
  - A. Kerber
  - et al.
- 2009
- IRPS 2009
Stress-induced leakage current and defect generation in nFETs with HfO ₂/TiN gate stacks during positive-bias temperature stress
- - Eduard Cartier
  - Andreas Kerber
- 2009
- IRPS 2009
The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability
- - Barry P. Linder
  - Eduard Cartier
  - et al.
- 2009
- IRPS 2009
TDDB failure distribution of metal gate / high-k CMOS devices on SOI substrates
- - A. Kerber
  - E. Cartier
  - et al.
- 2009
- IRPS 2009
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- - Soon-Cheon Seo
  - Chih-Chao Yang
  - et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- - Soon-Cheon Seo
  - Chih-Chao Yang
  - et al.
- 2009
- IITC 2009
Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks
- - Andreas Kerber
  - Eduard Albert Cartier
- 2009
- IEEE T-DMR