Excess current in n+GaAsAlxGa1-xAsnGaAs heterojunctions
- S.S. Lu
- K.R. Lee
- et al.
- 1990
- Surface Science
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112 results for S.L. Wright
Uniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K. Lee
- et al.
- 1989
- Applied Physics Letters
Growth and characterization of in-situ (In,Ga)As ohmic contacts to n-GaAs
- S.L. Wright
- R.F. Marks
- et al.
- 1989
- Journal of Crystal Growth
Noise spectroscopy of deep level (DX) centers in GaAs-AlxGa 1-xAs heterostructures
- J.R. Kirtley
- T.N. Theis
- et al.
- 1988
- Journal of Applied Physics
Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
- Sandip Tiwari
- D.J. Frank
- et al.
- 1988
- Journal of Applied Physics
Effect of a parallel magnetic field on tunneling in GaAs/AlxGa1-xAs heterostructures
- John A. Lebens
- Robert H. Silsbee
- et al.
- 1988
- Physical Review B
Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1-xAs of low Al content
- P.M. Mooney
- T.N. Theis
- et al.
- 1988
- Applied Physics Letters
Band bending and interface states for metals on GaAs
- R.E. Viturro
- J.L. Shaw
- et al.
- 1988
- Applied Physics Letters
Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures
- W.T. Masselink
- N. Braslau
- et al.
- 1988
- Solid State Electronics
Electron mobility in p-type GaAs
- M.I. Nathan
- W.P. Dumke
- et al.
- 1988
- Applied Physics Letters