MM-wave transceivers using SiGe HBT technology
- B.P. Gaucher
- T. Beukema
- et al.
- 2004
- SiRF 2004
Publications
Date
Featured collections
Popular topics
76 results for John D. Cressler
Proton radiation response of SiGe HBT analog and RF circuits and passives
- John D. Cressler
- Michael C. Hamilton
- et al.
- 2001
- IEEE TNS
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
Si/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
200 mm SiGe-HBT technology for wireless and mixed-signal applications
- D.L. Harame
- K. Schonenberg
- et al.
- 1994
- IEDM 1994
An Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Electron Device Letters
Fully-scaled 0.25-micron bipolar technology using variable shaped electron-beam lithography
- Philip J. Coane
- Kaolin G. Chiong
- et al.
- 1993
- Microlithography 1993
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
SPIRIT - A bipolar/BiCMOS isolation technology for high-performance VLSI
- J.N. Burghartz
- A.O. Cifuentes
- et al.
- 1993
- VLSI Technology 1993