Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors
- Michael Titze
- Alex Belianinov
- et al.
- 2024
- ACS Applied Electronic Materials
Publications
5 results for G. Vizkelethy
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
- Nathaniel A. Dodds
- James R. Schwank
- et al.
- 2014
- IEEE TNS
Evaluating the influence of various body-contacting schemes on single event transients in 45-nm SOI CMOS
- Kurt A. Moen
- Stanley D. Phillips
- et al.
- 2010
- IEEE TNS
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
- Jonathan A. Pellish
- Robert A. Reed
- et al.
- 2009
- IEEE TNS
Oxidation and reduction of copper oxide thin films
- Jian Li
- G. Vizkelethy
- et al.
- 1991
- Journal of Applied Physics