Publications

72 results for Harold J. Hovel

Development of stacking faults in strained silicon layers
- - S.W. Bedell
  - A. Reznicek
  - et al.
- 2005
- IEEE International SOI Conference 2005
Dislocation-free strained silicon-on-silicon by in-place bonding
- - G.M. Cohen
  - P.M. Mooney
  - et al.
- 2005
- Applied Physics Letters
Strained-silicon / silicon-germanium-on-insulator for high-performance CMOS : A manufacturable process for 300 mm substrates
- - A. Reznicek
  - S.W. Bedell
  - et al.
- 2004
- ECS Meeting 2004
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- - J. Cai
  - K. Rim
  - et al.
- 2004
- IEDM 2004
300 mm SGOI/strain-Si for high-performance CMOS
- - A. Reznicek
  - S.W. Bedell
  - et al.
- 2004
- IEEE International SOI Conference 2004
Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- - H.J. Hovel
  - M. Almonte
  - et al.
- 2004
- Solid-State Electronics
Switching and memory characteristics of ZnSe - Ge heterojunctions
- - H.J. Hovel
  - J.J. Urgell
- 2003
- Journal of Applied Physics
Electrical and optical properties of rf-sputtered GaN and InN
- - H.J. Hovel
  - J.J. Cuomo
- 2003
- Applied Physics Letters
Switching and memory in ZnSe single bond sign Ge heterojunctions
- - H.J. Hovel
- 2003
- Applied Physics Letters
High-efficiency Ga_1-xAl_xAsSingle Bond signGaAs solar cells
- - J. Woodall
  - H.J. Hovel
- 2003
- Applied Physics Letters