Publications

30 results for Efthimios Kaxiras

Optimized pseudopotentials
- - Andrew M. Rappe
  - Karin M. Rabe
  - et al.
- 1990
- Physical Review B
Electronic states due to surface doping: Si(111)3×3B
- - Efthimios Kaxiras
  - K.C. Pandey
  - et al.
- 1990
- Physical Review B
Adsorption of boron on Si(111): Physics, chemistry, and atomic-scale electronic devices
- - Ph. Avouris
  - In-Whan Lyo
  - et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
On the possibility of two-dimensional growth of GaAs on atomically flat Si(100) surfaces
- - Efthimios Kaxiras
  - J.D. Joannopoulos
- 1989
- Surface Science
Structural model for a covalently bonded Si₄₅ cluster
- - Efthimios Kaxiras
- 1989
- Chemical Physics Letters
Scanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface
- - C.K. Shih
  - Efthimios Kaxiras
  - et al.
- 1989
- Physical Review B
Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction
- - I.-W. Lyo
  - Efthimios Kaxiras
  - et al.
- 1989
- Physical Review Letters
Surfactants in epitaxial growth
- - M. Copel
  - M.C. Reuter
  - et al.
- 1989
- Physical Review Letters
Reply to comment on ground state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study
- - Efthimios Kaxiras
  - Efstratios Manousakis
- 1989
- Physical Review B
Microscopic model of heteroepitaxy of GaAs on Si(100)
- - Efthimios Kaxiras
  - O.L. Alerhand
  - et al.
- 1989
- Physical Review Letters