Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Publications
75 results for Dave Harame
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
Heterojunction Bipolar Transistors Using Si-Ge Alloys
- Subramanian S. Iyer
- Gary L. Patton
- et al.
- 1989
- IEEE T-ED
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
Base Profile Design for High-Performance Operation of Bipolar Transistors at Liquid-Nitrogen Temperature
- Johannes M. C. Stork
- David L. Harame
- et al.
- 1989
- IEEE T-ED
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Selective epitaxy base for bipolar transistors
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- ESSDERC 1988