Publications

28 results for Dale McHerron

Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- - Tenko Yamashita
  - Veeraraghvan S. Basker
  - et al.
- 2011
- VLSI Technology 2011
Aggressively scaled strained-silicon-on-insulator undoped-body High-κ/Metal-Gate nFinFETs for high-performance logic applications
- - Kingsuk Maitra
  - Ali Khakifirooz
  - et al.
- 2011
- IEEE Electron Device Letters
Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications
- - A. Khakifirooz
  - Kangguo Cheng
  - et al.
- 2010
- VLSI-TSA 2010
A 0.063 μm² FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch
- - Veeraraghvan S. Basker
  - Theodorus E. Standaert
  - et al.
- 2010
- VLSI Technology 2010
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- - K. Cheng
  - A. Khakifirooz
  - et al.
- 2009
- IEDM 2009
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
- - H. Kawasaki
  - V.S. Basker
  - et al.
- 2009
- IEDM 2009
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- - Soon-Cheon Seo
  - Chih-Chao Yang
  - et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- - Soon-Cheon Seo
  - Chih-Chao Yang
  - et al.
- 2009
- IITC 2009
22 nm technology compatible fully functional 0.1 μm ² 6T-sram cell
- - B. Haran
  - A. Kumar
  - et al.
- 2008
- IEDM 2008
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrules
- - S. Lane
  - M. Fukasawa
  - et al.
- 2005
- AMC 2005