Interaction of La2O3 capping layers with HfO 2 gate dielectrics
- M. Copel
- S. Guha
- et al.
- 2009
- Applied Physics Letters
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182 results for Eduard Cartier
Oxygen passivation of vacancy defects in metal-nitride gated HfO 2/SiO2/Si devices
- E. Cartier
- M. Hopstaken
- et al.
- 2009
- Applied Physics Letters
The evolution of optical and electrical properties of low-k dielectrics under bias stress
- J.M. Atkin
- E. Cartier
- et al.
- 2009
- Microelectronic Engineering
Interfacial layer optimization of high-k/metal gate stacks for low temperature processing
- Barry P. Linder
- Vijay Narayanan
- et al.
- 2009
- Microelectronic Engineering
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering
Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks
- Andreas Kerber
- Eduard Albert Cartier
- 2009
- IEEE T-DMR
Characterization of fast relaxation during BTI stress in conventional and advanced CMOS devices with HfO2 gate stacks
- Andreas Kerber
- Kingsuk Maitra
- et al.
- 2008
- IEEE Transactions on Electron Devices
Charge trapping at the low- k dielectric-silicon interface probed by the conductance and capacitance techniques
- J.M. Atkin
- E. Cartier
- et al.
- 2008
- Applied Physics Letters
Photocurrent spectroscopy of low- k dielectric materials: Barrier heights and trap densities
- J.M. Atkin
- D. Song
- et al.
- 2008
- Journal of Applied Physics
Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study
- Kingsuk Maitra
- Martin M. Frank
- et al.
- 2007
- Journal of Applied Physics