Publications

10 results for Robert D. Clark

Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf_0.5Zr_0.5O₂films
- - Vineetha Mukundan
  - Steven Consiglio
  - et al.
- 2020
- Applied Physics Letters
Paper
Electrical enhancement and higher-k engineering in ultra-thin atomic layer deposited Hf_1-xAl_xO_y films
- - K. Tapily
  - S. Consiglio
  - et al.
- 2014
- ECS J. Solid State Sci. Technol.
Paper
Higher-K formation in atomic layer deposited Hf_1-xAl_xO_y
- - Kandabara Tapily
  - Steven Consiglio
  - et al.
- 2014
- ECSSMEQ 2014
Conference paper
Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO₂and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
- - Steven Consiglio
  - Kandabara Tapily
  - et al.
- 2014
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf _1-xZr_xO₂ gate dielectrics deposited by a cyclical deposition and annealing scheme
- - Relja Vasić
  - Steven Consiglio
  - et al.
- 2013
- Journal of Applied Physics
Paper
Methodology of ALD HfO₂ high-κ gate dielectric optimization by cyclic depositions and anneals
- - H. Jagannathan
  - Robert D. Clark
  - et al.
- 2010
- ECS Transactions
Conference paper
Optimizing band-edge high-κ/metal gate n-MOSFETs with ALD lanthanum oxide cap layers-oxidant and positioning effects
- - Robert D. Clark
  - H. Jagannathan
  - et al.
- 2010
- ECS Transactions
Conference paper
Engineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer deposition
- - H. Jagannathan
  - L.F. Edge
  - et al.
- 2009
- ECS Meeting 2009
Conference paper
High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- - R.D. Clark
  - S. Consiglio
  - et al.
- 2008
- ECS Meeting 2008
Conference paper
Process and electrical characteristics of MO-ALD HfO₂ films for high-K gate applications grown in a production-worthy 300 mm deposition system
- - R.D. Clark
  - C.S. Wajda
  - et al.
- 2007
- ECS Meeting 2007
Conference paper