Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition system
- R.D. Clark
- C.S. Wajda
- et al.
- 2007
- ECS Meeting 2007
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60 results for P. Jamison
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
- V. Narayanan
- K. Maitra
- et al.
- 2006
- IEEE Electron Device Letters
A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors
- P. Jamison
- M. Copel
- et al.
- 2006
- MRS Spring Meeting 2006
Reduction of hafnium oxide and hafnium silicate by rhenium and platinum
- M. Copel
- R.P. Pezzi
- et al.
- 2006
- Applied Physics Letters
Electron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layer
- A.C. Callegari
- P. Jamison
- et al.
- 2006
- Journal of Applied Physics
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal deposition
- S. Zafar
- V. Narayanan
- et al.
- 2005
- VLSI Technology 2005
Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparation
- A.C. Callegari
- P. Jamison
- et al.
- 2005
- ECS Meeting 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005