A time-dependent clustering model for non-uniform dielectric breakdown
- Ernest Y. Wu
- B. Li
- et al.
- 2013
- IEDM 2013
Publications
65 results for Ernest Y. Wu
Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
Recent advances in dielectric breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Sune
- 2013
- IIRW 2013
Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2013
- Applied Physics Letters
Improving and optimizing reliability in future technologies with high-κ dielectrics
- Barry P. Linder
- Eduard Cartier
- et al.
- 2013
- VLSI-DAT 2013
Improving and optimizing reliability in future technologies with high-κ dielectrics
- Barry P. Linder
- Eduard Cartier
- et al.
- 2013
- VLSI-TSA 2013
A new formulation of breakdown model for high-κ/SiO2 stack dielectrics
- Ernest Y. Wu
- 2013
- IRPS 2013
Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Suñé
- 2013
- Journal of Applied Physics
Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IEDM 2012
Generalized successive failure methodology for non-Weibull distributions and its applications to SiO 2 or high-k/SiO 2 bilayer dielectrics and extrinsic failure mode
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IRPS 2012