Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2013
- Applied Physics Letters
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62 results for Ernest Y. Wu
Improving and optimizing reliability in future technologies with high-κ dielectrics
- Barry P. Linder
- Eduard Cartier
- et al.
- 2013
- VLSI-DAT 2013
Improving and optimizing reliability in future technologies with high-κ dielectrics
- Barry P. Linder
- Eduard Cartier
- et al.
- 2013
- VLSI-TSA 2013
A new formulation of breakdown model for high-κ/SiO2 stack dielectrics
- Ernest Y. Wu
- 2013
- IRPS 2013
Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Suñé
- 2013
- Journal of Applied Physics
Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IEDM 2012
Generalized successive failure methodology for non-Weibull distributions and its applications to SiO 2 or high-k/SiO 2 bilayer dielectrics and extrinsic failure mode
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IRPS 2012
Min-log approach to modeling dielectric breakdown data
- Emmanuel Yashchin
- Baozhen Li
- et al.
- 2012
- IRPS 2012
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Post-breakdown statistics and acceleration characteristics in high-K dielectric stacks
- Ernest Wu
- Jordi Sune
- et al.
- 2011
- IRPS 2011