Publications

23 results for D.-G. Park

Recent progress and challenges in enabling embedded Si:C technology
- - B. Yang
  - Z. Ren
  - et al.
- 2008
- ECS Meeting 2008
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- - Zhibin Ren
  - G. Pei
  - et al.
- 2008
- VLSI Technology 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- - M. Hamaguchi
  - H. Yin
  - et al.
- 2008
- VLSI Technology 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- - Haizhou Yin
  - M. Hamaguchi
  - et al.
- 2008
- VLSI-TSA 2008
(110) Channel, SiON gate-dielectric PMOS with record high I_on=1 mA/μm through channel stress and source drain external resistance (R _ext) engineering
- - B. Yang
  - A. Waite
  - et al.
- 2007
- IEDM 2007
High performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- - Z. Luo
  - N. Rovedo
  - et al.
- 2007
- VLSI Technology 2007
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- - M. Chudzik
  - B. Doris
  - et al.
- 2007
- VLSI Technology 2007
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- - Haizhou Yin
  - C.Y. Sung
  - et al.
- 2007
- VLSI Technology 2007
Ultra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack
- - B. Doris
  - B.P. Linder
  - et al.
- 2005
- VLSI-TSA 2005
Robust TaN _x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
- - H. Kim
  - C. Detavenier
  - et al.
- 2005
- Journal of Applied Physics