Publications

6 results for Ashish Baraskar

First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
Conference paper
Strained Si_1-xGe_x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- VLSI Technology 2014
Conference paper
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Circuits 2013
Conference paper
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Technology 2013
Conference paper
Ultra low contact resistivities for CMOS beyond 10-nm node
- - Zhen Zhang
  - Siyuranga Obasa Koswatta
  - et al.
- 2013
- IEEE Electron Device Letters
Paper
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
- - Uttam Singisetti
  - Mark A. Wistey
  - et al.
- 2009
- Physica Status Solidi (C) Current Topics in Solid State Physics
Paper