Publications

50 results for Greg Freeman

Noise performance of a low base resistance 200 GHz SiGe technology
- - D.R. Greenberg
  - B. Jagannathan
  - et al.
- 2002
- IEDM 2002
A 4.2-ps ECL ring-oscillator in a 285-GHz f _MAX SiGe technology
- - Basanth Jagannathan
  - Mounir Meghelli
  - et al.
- 2002
- IEEE Electron Device Letters
40-Gb/s circuits built from a 120-GHz f _T SiGe technology
- - Greg Freeman
  - Mounir Meghelli
  - et al.
- 2002
- IEEE Journal of Solid-State Circuits
Self-aligned SiGe NPN transistors with 285 GHz f _MAX and 207 GHz f _T in a manufacturable technology
- - B. Jagannathan
  - M. Khater
  - et al.
- 2002
- IEEE Electron Device Letters
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- - Seshadri Subbanna
  - Gregory Freeman
  - et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- - D.R. Greenberg
  - S. Sweeney
  - et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- - S. Subbanna
  - L. Larson
  - et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- - D.R. Greenberg
  - D. Ahlgren
  - et al.
- 1999
- IMS 1999
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- - D.R. Greenberg
  - D. Ahlgren
  - et al.
- 2000
- RFIC 2000
Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
- - D. Ahlgren
  - M.M. Gilbert
  - et al.
- 1996
- IEDM 1996