Defect mitigation of plasma-induced delamination of TiW/Cu from SiNx layer in thin si interposer processing with glass carriers
- Vijay Sukumaran
- Thuy Tran-Quinn
- et al.
- 2015
- ECTC 2015
Conference paper
Publications
8 results for Mark Chace
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
Conference paperPost cu cmp cleaning of polyurethane pad debris
- Wei-Tsu Tseng
- Elliott Rill
- et al.
- 2013
- ECS J. Solid State Sci. Technol.
PaperEffects of chemical mechanical polishing on a porous SiCOH dielectric
- S. Gates
- S. Papa Rao
- et al.
- 2012
- Microelectronic Engineering
PaperReliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
- R.R. Yu
- F. Liu
- et al.
- 2009
- VLSI Technology 2009
Conference paperAdvanced bilayer low-k dielectric cap for reliable high performance Cu-low k interconnects
- Griselda Bonilla
- Lawrence A. Clevenger
- et al.
- 2008
- ADMETA 2008
Conference paperEvaluation of barrier CMP slurries and characterization of ULK material properties shifts due to CMP
- Wei-Tsu Tseng
- Dimitri Kioussis
- et al.
- 2008
- ECS Meeting 2008
Conference paperGrowth of crystalline defects on the surface of FSG dielectrics
- J.P. Gambino
- J. Burnham
- et al.
- 2003
- AMC 2003
Conference paper