Interfacial segregation of dopants in fully silicided metal-oxide- semiconductor gates
- M. Copel
- R.P. Pezzi
- et al.
- 2005
- Applied Physics Letters
Paper
Publications
150 results for Matthew Copel
Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor
- David B. Mitzi
- Matthew Copel
- et al.
- 2005
- Advanced Materials
PaperInterfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
PaperSelectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
- et al.
- 2004
- IEDM 2004
Conference paperAdvanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Conference paperGrowth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)
- A. Portavoce
- M. Kammler
- et al.
- 2004
- Physical Review B - CMMP
PaperSystematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Conference paperUltrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- James Jer-Hueih Chen
- Nestor A. Bojarczuk Jr.
- et al.
- 2004
- IEEE Transactions on Electron Devices
PaperInterlayer composition of HfO 2/Si(001) films
- M. Copel
- M.C. Reuter
- et al.
- 2004
- Applied Physics Letters
PaperSuppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
- L.F. Edge
- D.G. Schlom
- et al.
- 2004
- Applied Physics Letters
Paper