pFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
Conference paper
Publications
150 results for Matthew Copel
Oxygen passivation of vacancy defects in metal-nitride gated HfO 2/SiO2/Si devices
- E. Cartier
- M. Hopstaken
- et al.
- 2009
- Applied Physics Letters
PaperScaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
- Martin M. Frank
- SangBum Kim
- et al.
- 2009
- Microelectronic Engineering
PaperGrowth of nanostructures by locally modified surface reactivity
- A. Portavoce
- M. Kammler
- et al.
- 2009
- Materials Science in Semiconductor Processing
PaperHigh-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- R.D. Clark
- S. Consiglio
- et al.
- 2008
- ECS Meeting 2008
Conference paperAu stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy
- Christian Wiethoff
- Frances M. Ross
- et al.
- 2008
- Nano Letters
PaperEffects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia
- C. D'Emic
- J.S. Newbury
- et al.
- 2008
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperReaction of barium oxide threshold voltage tuning layers with Si O2 and Hf O2 Si O2 gate dielectrics
- M. Copel
- 2008
- Applied Physics Letters
PaperPost deposition annealing of Hf aluminate films on Si investigated by ion backscattering and nuclear reaction analyses
- L. Miotti
- R.P. Pezzi
- et al.
- 2008
- Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
PaperEffect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers
- Katherine L. Saenger
- Stephen W. Bedell
- et al.
- 2008
- MRS Spring Meeting 2008
Conference paper