The biphenyl molecule as a model transistor
- Paul M. Solomon
- Norton D. Lang
- 2008
- ACS Nano
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164 results for Paul Solomon
Band bending and the thermochemistry of oxygen vacancies in ionic metal oxide thin films
- S. Guha
- P. Solomon
- 2008
- Applied Physics Letters
Remote phonon scattering in field-effect transistors with a high κ insulating layer
- B. Laikhtman
- P. Solomon
- 2008
- Journal of Applied Physics
Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires
- M.J. Rooks
- G.M. Cohen
- et al.
- 2007
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Measurements of inter-and-intra device transient thermal transport on SOI FETs
- P. Solomon
- M. Shamsa
- et al.
- 2007
- IEDM 2007
An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions
- G.M. Cohen
- P. Solomon
- et al.
- 2007
- DRC 2007
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
Gate work function engineering for nanotube-based circuits
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2007
- ISSCC 2007
Modeling single-event upsets in 65-nm silicon-on-insulator semiconductor devices
- A.J. KleinOsowski
- Phil Oldiges
- et al.
- 2006
- IEEE TNS