Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node
- Josephine Chang
- Michael A. Guillorn
- et al.
- 2011
- VLSI Technology 2011
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163 results for Paul Solomon
Front-end-of-line quadrature-clocked voltage-dependent capacitance measurement
- Stas Polonsky
- Paul Solomon
- et al.
- 2011
- ICMTS 2011
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Are Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions
Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs
- P. Solomon
- S.E. Laux
- et al.
- 2009
- DRC 2009
Back-end-of-line quadrature-clocked voltage-dependent capacitance measurements
- Stas Polonsky
- Paul Solomon
- et al.
- 2009
- ISTFA 2009
FDSOI CMOS with dual backgate control for performance and power modulation
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2009
- VLSI-TSA 2009
Contact resistivity of NiPtSi on n-doped silicon activated by laser annealing
- Francois Pagette
- Paul M. Solomon
- et al.
- 2008
- MRS Proceedings 2008
An equivalent circuit for separable electron streams in a gated dirac transmission line
- P. Solomon
- 2008
- DRC 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008