Publications

164 results for Paul Solomon

Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al_0.35Ga_0.65As
- - N. Caswell
  - P.M. Mooney
  - et al.
- 1986
- Applied Physics Letters
Properties of and prospects for the GaAs gate heterojunction FET
- - P. Solomon
- 1986
- Surface Science
Trapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature
- - M.I. Nathan
  - P.M. Mooney
  - et al.
- 1986
- Surface Science
Perpendicular transport across (Al,Ga)As and the Γ to X transition
- - Paul M. Solomon
  - Steven L. Wright
  - et al.
- 1986
- Superlattices and Microstructures
PERPENDICULAR TRANSPORT MEASUREMENTS IN GaAs/(Al,Ga)As/GaAs HETEROSTRUCTURES.
- - P. Solomon
  - S.L. Wright
- 1986
- IEEE T-ED
SELF-ALIGNED PROCESSES FOR THE GaAs GATE FET.
- - H. Baratte
  - D.C. La Tulipe
  - et al.
- 1985
- IEDM 1985
Negative charge, barrier heights, and the conduction-band discontinuity in Al_xGa_1-xAs capacitors
- - T.W. Hickmott
  - P. Solomon
  - et al.
- 1985
- Journal of Applied Physics
Direct measurement of the energy distribution of hot electrons in silicon dioxide
- - S.D. Brorson
  - D.J. DiMaria
  - et al.
- 1985
- Journal of Applied Physics
MAGNETOTUNNELING AND MAGNETIC FREEZEOUT IN n** minus GaAs-UNDOPED Al//xGa//1// minus //xAs minus n** plus GaAs CAPACITORS.
- - T.W. Hickmott
  - P. Solomon
  - et al.
- 1984
- ICPS Physics of Semiconductors 1984
CHARGE TRAPPING IN GaAs/AlGaAs MODULATION DOPED FETs.
- - P.M. Mooney
  - P. Solomon
  - et al.
- 1984
- Gallium Arsenide and Related Compounds 1984