A 10 nm MOSFET concept
- J. Appenzeller
- R. Martel
- et al.
- 2001
- Microelectronic Engineering
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163 results for Paul Solomon
Device scaling limits of Si MOSFETs and their application dependencies
- David J. Frank
- Robert H. Dennard
- et al.
- 2001
- Proceedings of the IEEE
100 nm gate lithography for double gate transistors
- Azalia Krasnoperova
- Ying Zhang
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
Triple-self-aligned, planar double-gate MOSFETs: Devices and circuits
- K.W. Guarini
- P. Solomon
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
- J. Appenzeller
- R. Martel
- et al.
- 2000
- Applied Physics Letters
Ultrathin 600°C wet thermal silicon dioxide
- J. Appenzeller
- J.A. Del Alamo
- et al.
- 2000
- Electrochemical and Solid-State Letters
Device innovation and material challenges at the limits of CMOS technology
- P. Solomon
- 2000
- Annual Review of Materials Science
Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction
- G.M. Cohen
- P.M. Mooney
- et al.
- 1999
- Applied Physics Letters
Nanoscale CMOS
- Hon-Sum Philip Wong
- David J. Frank
- et al.
- 1999
- Proceedings of the IEEE
CMOS and memories: From 100 nm to 10 nm!
- Sandip Tiwari
- Paul M. Solomon
- et al.
- 1999
- Microelectronic Engineering