Sub-40 nm SOI V-groove n-MOSFETs
- Joerg Appenzeller
- R. Martel
- et al.
- 2002
- IEEE Electron Device Letters
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164 results for Paul Solomon
The ballistic FET: Design, capacitance and speed limit
- Paul M. Solomon
- Steven E. Laux
- 2001
- IEDM 2001
A self-aligned silicide process for thin silicon-on-insulator MOSFETs and bulk MOSFETs with shallow junctions
- G.M. Cohen
- C. Cabral Jr.
- et al.
- 2001
- MRS Proceedings 2001
Sub-40nm V-groove MOSFETs
- J. Appenzeller
- R. Martel
- et al.
- 2001
- DRC 2001
Mixed mode double-gate FET model
- P. Solomon
- 2001
- DRC 2001
Interface studies of tungsten gate metal-oxide-silicon capacitors
- Huiling Shang
- Marvin H. White
- et al.
- 2001
- Applied Physics Letters
A 10 nm MOSFET concept
- J. Appenzeller
- R. Martel
- et al.
- 2001
- Microelectronic Engineering
100 nm gate lithography for double gate transistors
- Azalia Krasnoperova
- Ying Zhang
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
Device scaling limits of Si MOSFETs and their application dependencies
- David J. Frank
- Robert H. Dennard
- et al.
- 2001
- Proceedings of the IEEE
Triple-self-aligned, planar double-gate MOSFETs: Devices and circuits
- K.W. Guarini
- P. Solomon
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting