The complete time/temperature dependence of I-V drift in PCM devicesManuel Le GalloAbu Sebastianet al.2016IRPS 2016
A finite-element thermoelectric model for phase-change memory devicesA. AthmanathanDaniel Krebset al.2015SISPAD 2015
A collective relaxation model for resistance drift in phase change memory cellsAbu SebastianDaniel Krebset al.2015IRPS 2015
Deep neural network inference with a 64-core in-memory compute chip based on phase-change memoryManuel Le Gallo2024CIMTEC 2024
Deep neural network inference with a 64-core in-memory compute chip based on phase-change memoryManuel Le Gallo2023E\PCOS 2023
Deep neural network inference with a 64-core in-memory compute chip based on phase-change memoryManuel Le Gallo2023NVMTS 2023
Architecture and Programming of Analog In-Memory-Computing Accelerators for Deep Neural NetworksSidney TsaiPritish Narayananet al.2024IPDPS 2024
Using the IBM Analog In-Memory Hardware Acceleration Kit for Neural Network Training and InferenceManuel Le GalloCorey Liam Lammieet al.2023APL Mach. Learn.
Exploiting the State Dependency of Conductance Variations in Memristive Devices for Accurate In-Memory ComputingAthanasios VasilopoulosJulian Buchelet al.2023IEEE T-ED
A Multi-Memristive Unit-Cell Array with Diagonal Interconnects for In-Memory ComputingRiduan Khaddam-AljamehMichele Martemucciet al.2021IEEE TCAS-II