Electro-optical properties of barium titanate films epitaxially grown on silicon
- Stefan Abel
- Daniele Caimi
- et al.
- 2012
- SPIE OPTO 2012
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119 results for Christophe Rossel
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2012
- Applied Physics Letters
Self-aligned S/D regions for InGaAs MOSFETs
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2011
- ESSDERC 2011
Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2011
- Applied Physics Letters
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- M. Richter
- Christophe Rossel
- et al.
- 2011
- Journal of Crystal Growth
Resistance switching at the nanometre scale in amorphous carbon
- Abu Sebastian
- Andrew Pauza
- et al.
- 2011
- New Journal of Physics
Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- Chiara Marchiori
- Ed Kiewra
- et al.
- 2010
- Applied Physics Letters
Extraction of interface trap density in high-k/Ge gate stacks and determination of the charge neutrality level
- D. Bozyigit
- C. Rossel
- 2009
- DRC 2009
H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- C. Marchiori
- D.J. Webb
- et al.
- 2009
- Journal of Applied Physics