High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- Winston Chern
- Pouya Hashemi
- et al.
- 2012
- IEDM 2012
Conference paper
Publications
23 results for Dimitri A. Antoniadis
Possible observation of ballistic contact resistance in wide Si MOSFETs
- Amlan Majumdar
- Dimitri A. Antoniadis
- 2012
- DRC 2012
Conference paperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
PaperEffect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene
- Christos Dimitrakopoulos
- Alfred Grill
- et al.
- 2011
- Applied Physics Letters
PaperRF performance of short channel graphene field-effect transistor
- Yanqing Wu
- Yu-Ming Lin
- et al.
- 2010
- IEDM 2010
Conference paperA simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters
- Ali Khakifirooz
- Osama M. Nayfeh
- et al.
- 2009
- IEEE Transactions on Electron Devices
PaperMOSFET performance scaling: Limitations and future options
- Dimitri A. Antoniadis
- Ali Khakifirooz
- 2008
- IEDM 2008
Conference paperImpact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- Hasan M. Nayfeh
- et al.
- 2004
- IEEE Transactions on Electron Devices
PaperInvestigation of Scaling Methodology for Strained Si n-MOSFETs Using a Calibrated Transport Model
- Hasan M. Nayfeh
- Judy L. Hoyt
- et al.
- 2003
- IEDM 2003
Conference paperDesign of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors
- A. Sadek
- K. Ismail
- et al.
- 1996
- IEEE Transactions on Electron Devices
Paper